Applied Physics Letters · 1982 · 76 citations · 7 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsSemiconductor LasersSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCarrier Number FluctuationsConductionLaser LinewidthLasersLinewidth BroadeningLinewidth NarrowingRefractive Index FluctuationsSemiconductor Laser Diodes
We report here the experimental observation of power-independent linewidth broadening of cw single-frequency (GaAl)As diode lasers. This phenomenon is attributed to refractive index fluctuations resulting from statistical fluctuations in the number of conduction electrons in the small active volume of the devices studied.
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