Applied Physics Letters · 1981 · 40 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesRefractive IndexSemiconductor LasersCarrier MobilityExternal Cavity Laser DiodesExternal-cavity LasersLight-induced Refractive Index ChangeOptical Gain In SemiconductorsPopulation Inversion In Semiconductor LasersSemiconductor Laser DiodesThermal Effects
A red-shift in the diode modes with increasing optical feedback is observed in external-cavity AlxGa1−xAs injection lasers. This shift is due to a change in the refractive index in the active region resulting from a reduction in the population-inversion induced by the optical feedback. This leads to a new determination of the carrier dependence of the refractive index at the laser wavelength in the active region of semiconductor lasers independent of current-induced thermal effects.
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