EBIC observation of n-GaN grown on sapphire substrates by MOCVD

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

Engineering, Materials Engineering, Materials Science +17

Spatial distribution of the luminescence in GaN thin films

F. A. Ponce, D. P. Bour, Werner Götz et al. · Applied Physics Letters · 1996 · 361 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates

Takahiro Kozawa, Tetsu Kachi, Takeshi Ohwaki et al. · Journal of The Electrochemical Society · 1996 · 69 citations

Engineering, Materials Engineering, Materials Science +17

Absorption, Reflectance, and Luminescence of GaN Single Crystals

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

Takashi Egawa, Hiroyasu Ishikawa, T. Jimbo et al. · Applied Physics Letters · 1996 · 46 citations · Full text

Engineering, Electrical Engineering, Materials Science +17