Ta penetration into template-type porous low-k material during atomic layer deposition of TaN

Abstract

Ta penetration into a planar template-type porous low-k film during atomic layer deposition of TaN has been investigated by evaluating relations between Ta penetration and number of deposition cycles, exposure time of Ta precursor per deposition cycle, substrate temperature, and porosity of the porous low-k. The precursors were pentakisdimethylaminotantalum [PDMAT:Ta(N(CH3)2)5] and NH3. The porous low-k was a methylsiloxane (MSX) whose pore size in the maximum distribution and porosity of the porous low-k were 0–1.9nm and 0%–47%. Depth profile of the Ta penetration was measured by transmission electron microscopy and energy dispersive x-ray spectroscopy. The amount of penetrated and the penetration depth depended on the porosity. It was found that the precursors penetrate into the MSX film dominantly by gas phase diffusion through pores connecting from the surface to the inside. Increased surface area of the MSX film due to the pores results in a depletion of precursor at the wafer edge, and that this depletion causes the penetration characteristics at the edge of wafer differ from those at the center of the wafer. Moreover, the thickness required for the pore sealing by additive liner deposition is discussed.