A 20-mW G-band Monolithic Driver Amplifier Using 0.07-μm InP HEMT

Abstract

In this paper, a four-stage driver amplifier MMIC covering 160 GHz to 195 GHz is reported. The amplifier uses 0.07-mum T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs with 2-mil substrate thickness. With two MMICs cascaded in WR-5 housing, the assembly exhibits 25-40 dB linear gain from 160 GHz to 195 GHz. When biased at 1.2V, 10-mW saturated output power and 6.5% power-added-efficiency are achieved. 20-mW saturated output power is obtained when 2V drain voltage is applied. The performance of the reported driver amplifier represents state-of-the-art power performance achieved at G-band