2006 · 31 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsGallium Nitride Microwave Integrated CircuitsGallium Nitride Power AmplifiersGan-based High-frequency DevicesHigh-gain AmplifiersMicrowave Amplifier DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit AmplifiersPower Output
In this paper, a four-stage driver amplifier MMIC covering 160 GHz to 195 GHz is reported. The amplifier uses 0.07-mum T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs with 2-mil substrate thickness. With two MMICs cascaded in WR-5 housing, the assembly exhibits 25-40 dB linear gain from 160 GHz to 195 GHz. When biased at 1.2V, 10-mW saturated output power and 6.5% power-added-efficiency are achieved. 20-mW saturated output power is obtained when 2V drain voltage is applied. The performance of the reported driver amplifier represents state-of-the-art power performance achieved at G-band
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Beyond G-band: a 235 GHz InP MMIC amplifier
Douglas Dawson, Lorene Samoska, A. Fung et al. · IEEE Microwave and Wireless Components Letters · 2005 · 41 citations