EngineeringElectrical EngineeringAntennasMicroelectronicsMicrowave EngineeringLow-noise Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoiseRadio-frequency Integrated CircuitsLow-noise AmplifiersMicrowave Amplifier DesignMicrowave Sounder DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit AmplifiersMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsNoise Figure
We present the development of a low noise amplifier (LNA) module which demonstrates gain >24 dB and noise figure (NF)<5.5 dB at 183 GHz. Our previous results reported NF<8.3 dB [1], This improvement was achieved by inserting a single-ended microwave monolithic integrated circuit (MMIC) LNA utilizing TRW's 0.08 /spl mu/m gate InP MMIC technology. This paper discusses the development of the new MMIC LNA, reviews the previous results and presents the new data that was obtained,.
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A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
K.H.G. Duh, P.C. Chao, S.M.J. Liu et al. · IEEE Microwave and Guided Wave Letters · 1991 · 135 citations
An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz
R. Lai, M. Barsky, Tian‐Wei Huang et al. · IEEE Microwave and Guided Wave Letters · 1998 · 37 citations