Publication | Closed Access
A 150-215 GHz InP HEMT low noise amplifier with 12 dB gain
18
Citations
5
References
2005
Year
Unknown Venue
Electrical EngineeringMillimeter Wave TechnologyDb GainMum SubstrateEngineeringHigh-frequency DeviceRf SemiconductorElectronic EngineeringAntennaSingle-ended Microstrip DesignMicroelectronicsMicrowave EngineeringRf Subsystem
We present a 150-215 GHz InP HEMT MMIC with greater than 12dB gain across this band. The MMIC is a 3-stage, single-ended microstrip design implemented using 0.07 mum T-gate InP HEMT MMIC technology with 50 mum substrate
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