Applied Physics Letters · 1998 · 58 citations · 13 references
Natural SciencesMaterials ScienceOptoelectronicsSemiconductor MaterialsSpectroscopyElectronic SpectroscopyOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsSemiconductor PhysicsSolar CellsGaussian DistributionsInterband TransitionsPhotoluminescence SpectroscopyQuantum Dot MaterialsQuantum Dot PhotophysicsSelf-assembled Quantum DotsSemiconductor Quantum Dots
We present a detailed study of the interband excitonic transitions of InAs/GaAs self-organized quantum dots (QDs) based on photovoltage (PV), photoreflectance (PR) and photoluminescence (PL) spectroscopy. At room temperature, the interband absorption transitions of QDs have been observed by using PV spectrum, which clearly exhibits four well-resolved excitonic absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding excitonic transitions are also observed in PR experiment at 77 K. The first derivative of a Gaussian profile can fit the experimental data well.
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Ultranarrow Luminescence Lines from Single Quantum Dots
Marius Grundmann, J. Christen, N. N. Ledentsov et al. · Physical Review Letters · 1995 · 738 citations
Engineering, Materials Science, Condensed Matter Physics +16