An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InP

Abstract

Deep level photoluminescence bands related to Mn and Fe in InP are investigated. In InP(Mn) a strong broad band peaking at 1.15 eV and with phonon structure at 1.184, 1.145, and 1.107 eV is observed. A broad band peaking at 1.10 eV with weak phonon structure at 1.135, 1.098, and 1.062 eV is observed in InP(Fe). Several undoped InP crystals also reveal a band identical to that seen in InP(Mn) suggesting that Mn may be an inadvertent impurity. In these undoped samples and also in InP(Cr) the intensity of this band is greatly enhanced after thermal annealing (750 °C), suggesting that Mn may be diffusing to the surface. Mn has been previously reported to behave in this way in GaAs. Other unidentified deep level photoluminescence features in undoped material are also observed at 0.765 and 1.284 eV. Fe is detected as an inadvertent impurity in some undoped samples from studying the Fe2+(5T2−5E) internal transition.