Indium Phosphide

Abstract

Solution‐, vapor‐, and melt‐grown InP have been analyzed with photoluminescence measurements over the temperature range 5°–300°K. Although undoped material is discussed, the main emphasis is on doped InP grown from an indium solution for use as LED material. Optical activation energies were determined for hydrogenic donors, 7–10 meV; simple acceptors, zinc −50 meV, cadmium −58 meV, and mercury −98 meV; the isoelectronic trap bismuth, −31 meV; transition metal acceptors, copper −60–73 meV and manganese −270 meV.