Applied Physics Express · 2013 · 10 citations · 30 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesOptoelectronic DevicesSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGreen Light-emitting DiodesPower Output
We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0 nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5 nm and 30.7%, respectively).
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