Applied Physics Letters · 2011 · 32 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSpintronicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsHall EffectHall Effect MeasurementsHeterostructure OptoelectronicsHeterostructuresSpin Dynamics In SemiconductorsTwo-dimensional Electron GasesTwo-dimensional Electron Systems
The photocurrent has been measured in Al0.25Ga0.75N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin–orbit coupling of the two-dimensional electron gas in Al0.25Ga0.75N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.
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