Japanese Journal of Applied Physics · 1995 · 15 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySurface ChemistrySurface ScienceSemiconductor InterfacesSemiconductor SurfacesSurface Chemistry Of SolidsSurface PhysicsSurface SpectroscopyX-ray Photoelectron SpectroscopyChemical EtchingCrystalline SiliconDepth ProfilingEtchingSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon DioxideSilicon Surface Science
Chemical states of 6H polytype crystalline silicon carbide (6H-SiC) surfaces were investigated using X-ray photoelectron spectroscopy (XPS). Surface contaminants such as C-C, C-H and C-O species were evaluated from C1s photoelectron spectra after treatment under various conditions. Clean SiC surfaces were found to appear after the chemical etching of a thermal oxide ( SiO 2 ) film using a buffered HF solution. Furthermore, to clarify the chemical etching characteristics of SiO 2 formed on 6H-SiC substrates, the depth profiling of the SiO 2 was also performed using XPS. The C1s peak at a binding energy of about 286.2 eV was detected on the surfaces of the 6H-SiC substrates at the moment when only the SiO 2 was completely removed, and the C1s peak was characterized as due to the C-O bonds formed near the SiO 2 /SiC interface.
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Site-competition epitaxy for superior silicon carbide electronics
David Larkin, Philip G. Neudeck, J. A. Powell et al. · Applied Physics Letters · 1994 · 321 citations