Applied Physics Letters · 1978 · 39 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsEtching ProcessesPlasma Surface TreatmentPolymer Thin FilmsThin Film EtchingThin Film LithographyDry EtchingEtch ChemistryEtch RatePlasma EtchingSurface Etching
An as-deposited As2S3 thin film is employed as a negative working inorganic resist in lithographic applications. A CF4 plasma is used to etch differentially for pattern delineation. A maximum etch rate ratio of 1.8 between the unexposed and exposed films is obtained. Ag-photodoped As2S3 is found to have a much slower etch rate in the CF4 plasma. Grating patterns have been obtained using this dry process. The extension of this concept to conventional organic polymer resists is considered.
11
A new inorganic electron resist of high contrast
Akira Yoshikawa, Osamu Ochi, Haruo Nagai et al. · Applied Physics Letters · 1977 · 82 citations
Natural Sciences, Materials Engineering, Materials Science +17