Applied Physics Letters · 1977 · 82 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAmorphous Electronic MaterialsChalcogenide GlassesDopingGlass MaterialsSemiconductor Device MaterialsThin Film Electrical PropertiesAmorphous Chalcogenide SemiconductorsAmorphous ChalcogenidesChalcogenide Thin FilmsElectron Beam Irradiation EffectsElectron Beam Resist MaterialsHigh-contrast MaterialsResist ContrastResist Sensitivity
A novel inorganic electron resist is proposed. It is shown that the electron irradiation on a stacked layer composed of a thin Ag film over a layer of Se-Ge chalcogenide amorphous glass enhances diffusion of Ag into Se-Ge glass, in the same manner as in the case of photodoping. The Ag-doped Se-Ge film becomes almost insoluble in alkaline solutions. A negative-type electron resist is realized by applying this effect. This inorganic electron resist is proved to exhibit an extremely high contrast (γ∼8). The sensitivity is 4×10−5 C/cm2 at 5 kV. It is confirmed that fine-pattern delineation of less than 0.3 μm linewidth is possible.
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