Applied Physics Letters · 1997 · 41 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesOptical SourcesOptical Thin FilmsPhotonic Integrated CircuitsSemiconductor LasersThin Film Optical PropertiesDistributed Bragg Reflector LasersLaser ThresholdLow-threshold Current LasersOxidationSelective OxidationSemiconductor Laser DiodesThreshold Current ReductionVertical-cavity Surface-emitting Lasers
Data are presented on vertical-cavity surface-emitting lasers that use high contrast distributed Bragg reflectors on both sides of the cavity. The upper reflector consists of a six pair ZnSe/MgF quarter-wave stack, while the lower reflector consists of an eleven pair AlxOy/GaAs stack fabricated using selective oxidation. Strain due to the lower reflector is reduced by using AlxOy layers of less than a quarter-wave thickness. Device sizes ranging from 1 to 7 μm diameters are characterized, with a minimum threshold current of 53 μA.
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Wide-bandwidth distributed Bragg reflectors usingoxide/GaAs multilayers
M.H. MacDougal, Hanyu Zhao, P.D. Dapkus et al. · Electronics Letters · 1994 · 133 citations
Natural Sciences, Electrical Engineering, Materials Science +14