Electronics Letters · 1994 · 133 citations · 9 references
Natural SciencesElectrical EngineeringMaterials ScienceOptical MaterialsOpticsSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptical Thin FilmsOxide SemiconductorsRefractive IndexSemiconductor Device MaterialsThin Film Optical PropertiesDevice FabricationMultilayer MaterialsNative Oxide LayersNative Oxide PassivationReflectivity
The authors have designed and fabricated a wide bandwidth high reflectivity distributed Bragg reflector (DBR) using the native oxide of AlAs as the low refractive index layer and GaAs as the high refractive index layer. Results show that the refractive index of the native oxide is 1.55±0.01, the peak reflectivity of the DBR is over 99%, and the reflectivity bandwidth is ~460 nm.
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R. E. Fern, A. Onton · Journal of Applied Physics · 1971 · 182 citations
Native oxide stabilization of AlAs-GaAs heterostructures
A. R. Sugg, N. Holonyak, J. E. Baker et al. · Applied Physics Letters · 1991 · 69 citations
High index contrast mirrors for optical microcavities
Seng-Tiong Ho, S. L. McCall, R. E. Slusher et al. · Applied Physics Letters · 1990 · 51 citations
Natural Sciences, Materials Engineering, Materials Science +13