Applied Physics Letters · 1993 · 38 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ChemistrySurface ScienceLuminescent MaterialsPorous MaterialsSemiconductor SurfacesSilicon MaterialsSurface PassivationSurface PhysicsElectronic Structure AnalysisMolecular Orbital AnalysisPhotoluminescencePorous SiliconSiliconSilicon ChemistrySurface CoverageThermal Treatment
The effect of hydrogen and oxygen surface termination atoms on the visible luminescence of porous Si was investigated for underlying physical mechanism. Atmospheric thermal treatment up to 1000 °C was carried out to study the functional relationship between the surface coverage and photoluminescence (PL). The results show that oxygen incorporation induces surface modification that enhance the PL efficiency after the removal of all SiHx (x=1–3) species. The presence of oxygen atoms can also account for the observed PL redshift along with the usual blueshift. The molecular orbital calculations on the cluster modeling showed the significance of oxygen atoms in modifying the electronic structure of porous Si.
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Porous silicon formation mechanisms
R. L. Smith, Scott D. Collins · Journal of Applied Physics · 1992 · 1.2K citations
Rapid-thermal-oxidized porous Si−The superior photoluminescent Si
V. Petrova-Koch, T. Muschik, A. Kux et al. · Applied Physics Letters · 1992 · 466 citations
Natural Sciences, Materials Engineering, Materials Science +17
Luminescence degradation in porous silicon
M. A. Tischler, R. T. Collins, J. H. Stathis et al. · Applied Physics Letters · 1992 · 465 citations
Natural Sciences, Materials Engineering, Materials Science +17