Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

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Natural Sciences, Materials Engineering, Materials Science +12

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 470 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Nuo Xu, Lifeng Liu, Xiao Wei Sun et al. · Applied Physics Letters · 2008 · 374 citations

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Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Ugo Russo, Deepak Kamalanathan, Daniele Ielmini et al. · IEEE Transactions on Electron Devices · 2009 · 321 citations

Natural Sciences, Electrical Engineering, Materials Science +17