Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 73 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsElectron DiffractionEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsArsenic KineticsEpitaxial Film GrowthEpitaxial Growth KineticsGallium ArsenideHomoepitaxial GrowthMolecular Beam EpitaxyReflection High-energy Electron DiffractionSubstrate Temperature Effects
A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 °C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.