R. Fernandez

Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms

B. Lewis, F. J. Grunthaner, A. Madhukar et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 113 citations

Natural Sciences, Materials Engineering, Materials Science +17

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

B. Lewis, R. Fernandez, A. Madhukar et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

Y. J. Yang, T. G. Dziura, Thomas Bardin et al. · Applied Physics Letters · 1993 · 27 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy

M. Y. Yen, A. Madhukar, B. Lewis et al. · Surface Science · 1986 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +16

Reproducible growth conditions by group III and group V controlled incorporation rate measurements

R. Fernandez · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17