Applied Physics Letters · 1993 · 27 citations · 18 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersContinuous-wave LasersEpitaxial MaterialsIntegrated LasersIntegrated Semiconductor LasersMaximum Power OutputMetal-semiconductor Field-effect TransistorsMolecular Beam EpitaxyVertical-cavity Surface-emitting Lasers
Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy (MBE) at the same time. The VCSELs with a 10 μm diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (cw) maximum power of 1.1 mW. The MESFETs with a 3 μm gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.
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GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 105 citations
Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
Y.H. Lee, B. Tell, K. Brown-Goebeler et al. · Electronics Letters · 1990 · 73 citations