Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

Characterization of threading dislocations in GaN epitaxial layers

T. Hino, Shigetaka Tomiya, T. Miyajima et al. · Applied Physics Letters · 2000 · 400 citations

Engineering, Materials Engineering, Materials Science +17

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

K. Hiramatsu, K. Nishiyama, Atsushi Motogaito et al. · physica status solidi (a) · 1999 · 283 citations

Engineering, Materials Engineering, Materials Science +17