Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

Abstract

A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.