Applied Physics Letters · 2000 · 29 citations · 10 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsAtomic Force MicroscopyEpitaxial GrowthNucleationSemiconductor PhysicsSemiconductor Thin FilmsSurface MorphologyFilm Growth MechanismsIsland GrowthIsland NucleationMolecular Beam EpitaxyMolecular Beam Epitaxy NucleationRipple FormationTapping Mode Atomic Force MicroscopyThin-film Growth Mechanisms
In 0.25 Ga 0.75 As epilayers were grown on GaAs (001) substrates (1.8% misfit strain) by molecular beam epitaxy to investigate the two-dimensional to three-dimensional transition as a function of thickness (t⩽30 MLs). Tapping-mode atomic force micrographs show the evolution of the morphology as a function of thickness. As the film is deposited, the nucleation of 3D islands followed by cooperative nucleation of pits is observed. As the thickness increases, both islands and pits continue to nucleate and grow until they coalesce, resulting in a fully formed ripple morphology running along the [11̄0]. The ripples also exhibit a secondary alignment roughly along the 〈310〉 which is attributed to the nucleation of islands with {136} faces.
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Effect of strain on surface morphology in highly strained InGaAs films
C. W. Snyder, B. G. Orr, David A. Kessler et al. · Physical Review Letters · 1991 · 499 citations