Concepedia

Group V acceptor doping of CdxHg1−xTe layers grown by metal-organic vapour phase epitaxy

P. Capper, P.A.C. Whiffin, B.C. Easton, C. D. Maxey, I. Kenworthy

Materials Letters · 1988 · 34 citations · 9 references

DOI

Concepts

References

9

The behaviour of selected impurities in CdxHg1−xTe

P. Capper · Journal of Crystal Growth · 1982 · 75 citations

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Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions

H. R. Vydyanath, J. Ellsworth, C. Devaney · Journal of Electronic Materials · 1987 · 73 citations

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The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich melts

M. H. Kalisher · Journal of Crystal Growth · 1984 · 62 citations

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Arsenic-doped <i>p</i>-CdTe layers grown by organometallic vapor phase epitaxy

S. K. Ghandhi, N. R. Taskar, I. Bhat · Applied Physics Letters · 1987 · 52 citations

, , +16

Ion implanted junction formation in Hg1−<i>x</i>Cd<i>x</i>Te

L. O. Bubulac, W. E. Tennant, D. S. Lo et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1987 · 50 citations

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