2008 · 10 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceMetallic MaterialsMetallurgySemiconductor DevicesAlloysInterconnect TechnologyMetalsSemiconductor Device MaterialsSemiconductor ReliabilityBarrier Layer FormationBarrier MaterialsCopper InterconnectsDual Damascene ProcessElectromigration AnalysisElectromigration ReliabilityInterconnect ReliabilityWettability Control
A Ru-Ta alloy is applied to Cu dual damascene interconnects due to its good wettability with Cu. Using Ru-Ta alloy film as a barrier layer, filling property of ECP-Cu is improved and complete filling for trenches of 45 nm in width can be achieved. Although further optimization of CMP process is necessary, Ru-Ta alloy barrier also improves estimated lifetime of electromigration.