Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe

Shin-ichi Nakashima, Kohji Mizoguchi, Yasuo Inoue, Michihiro Miyauchi, Akiyoshi Mitsuishi, T. Nishimura, Yoichi Akasaka

Japanese Journal of Applied Physics · 1986 · 13 citations · 10 references

Concepts

Abstract

We have measured two-dimensional Raman intensity images of laser-recrystallized polycrystalline silicon islands on insulators by a scanning Raman microprobe. It is found that crystallites with about ten µm size grow along the scanning direction of an annealing laser. The crystallographic orientations of the crystallites have been determined by Raman microprobe polarization measurements.

References

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