Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

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Applied Physics Letters

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Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

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Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN <i>p-n</i> junction diodes

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