Applied Physics Letters · 1979 · 21 citations · 11 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsNoise In Electronic DevicesNoise In Semiconductor DevicesP-n JunctionsPhotodetectorsSemiconductor DetectorsSemiconductor HeterostructuresAvalanche PhotodiodesExcess NoiseInternal Quantum EfficiencyIonizationMultiplication FactorNoise FactorsNoise In PhotodiodesPhotodiodes
Low-noise and high-quantum-efficiency germanium APD’s have been investigated by a p+-n structure. Boron implantation was used to form the p+ layer. Shallow p+-n junctions have a lower excess noise that n+-p junctions because holes have a higher ionization coefficient in germanium, and these p+-n diodes have a higher hole-to-electron collection efficiency. Excess noise factors F≈7 at a multiplication factor of 10 are obtained at wavelength of ∼1.4 μm, whereas F≈11 for n+-p diodes. An internal quantum efficiency of ∼80% is obtained at 1.15 μm.
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Avalanche Breakdown in Germanium
S. L. Miller · Physical Review · 1955 · 373 citations
GaInAsP/InP avalanche photodiodes
C. E. Hurwitz, J. J. Hsieh · Applied Physics Letters · 1978 · 109 citations