Applied Physics Letters · 1978 · 109 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsAvalanche ProcessesDetector TechnologyPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesAvalanche GainAvalanche Photodiode DetectorsAvalanche PhotodiodesEpitaxial MaterialsPhotodiodes
Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise times of 150 psec or less, and low-bias quantum efficiencies of 45% have been measured.
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