Applied Physics Letters · 1973 · 27 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsInfrared DetectorsP-n JunctionsPhotodetectorsPhotovoltaic DevicesSemiconductor DetectorsSemiconductor PhysicsDetector Quantum EfficiencyP-n Junction DetectorsP-n Junction Solar CellsPhotodetectionPhotodiodesPhotovoltaic Infrared DetectorsQuantum EfficiencyResponsivity
p-n junction photovoltaic detectors have been obtained by Hg implantation in Hg1−x Cdx Te for the 2- to 14-μm band. High-sensitivity photodiodes were achieved over the entire range quoted; the most interesting results are those concerning the 8- to 14-μm range; peak detectivity better than 1010 cm Hz1/2 W−1, a zero-bias resistance area product between 2.4–0.12 Ω cm2, spcific responsivity between 1.2 × 104 and 5 × 102 V W−1, and quantum efficiency between 65% and 45% were obtained.
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Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment
J.P. Donnelly, A. R. Calawa, T. C. Harman et al. · Solid-State Electronics · 1972 · 38 citations