Applied Physics Letters · 1972 · 36 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsP-n JunctionsPhotodetectorsPhotovoltaic DevicesSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor PhysicsDetector FabricationIon Implantation EffectsJunction ResistanceP-i-n PhotodetectorsP-n Junction CharacteristicsP-n Junction DetectorsP-n Junction Solar CellsPhotodiodes
n-p junction photovoltaic detectors in PbTe have been fabricated using Sb+ ion implantation to create the n-type layer. At 77 °K, 15-mil square diodes have had zero-bias resistances as high as 15 MΩ for a resistance-area product of 2.1×104 Ωcm2. Peak detectivities at 4.4 μm in reduced background as high as 1.6×1012 cmHz1/2/W were observed. Diode quantum efficiencies were typically 40% at 4.4 μm.
2
A. R. Riben, D.L. Feucht · Solid-State Electronics · 1966 · 202 citations