Concepedia

Carbon clustering in Si1−C formed by ion implantation

L. Calcagno, Giuseppe Compagnini, G. Fóti, M.G. Grimaldi, Paolo Musumeci

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 30 citations · 10 references

DOI

References

10

Optimum semiconductors for high-power electronics

K. Shenai, R.S. Scott, B. Jayant Baliga · IEEE Transactions on Electron Devices · 1989 · 605 citations

, , +14

Physics of Amorphous Silicon–Carbon Alloys

J. Bullot, Martin Schmidt · physica status solidi (b) · 1987 · 462 citations

, , +3

Annealing and crystallization processes in a hydrogenated amorphous SiC alloy film

D. K. Basa, F. W. Smith · Thin Solid Films · 1990 · 147 citations

High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films

John W. Palmour, Hoyoul Kong, R. F. Davis · Applied Physics Letters · 1987 · 109 citations

, , +12

Electrical properties of ion-implanted <i>p</i>-<i>n</i> junction diodes in β-SiC

J. A. Edmond, Kalyan Kumar Das, R. F. Davis · Journal of Applied Physics · 1988 · 87 citations

, , +14