Applied Physics Letters · 1987 · 78 citations · 8 references
EngineeringElectrical EngineeringElectronic MaterialsOptoelectronicsPhotonicsDetector TechnologyHigh-frequency Semiconductor DevicesPhotodetectorsSemiconductor DetectorsAvalanche Photodiode DetectorsAvalanche PhotodiodesCarrier Drift VelocityCharge Carrier Drift VelocityPhotodiodesSaturationVelocityVelocity Saturation
Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.
8