Applied Physics Letters · 1986 · 39 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsMicrowave Semiconductor DevicesSemiconductor HeterostructuresSemiconductor LasersBandwidthHeterostructure LasersHeterostructure MaterialsHeterostructure OptoelectronicsInterconnect ParasiticsQuantum Well Laser DiodesQuantum Well LasersSemiconductor Laser Diodes
The frequency response of a 1.3-μm InGaAsP vapor phase regrown buried heterostructure laser with an 18-GHz cw bandwidth is analyzed in detail. The intrinsic bandwidth of the device is shown to be 22 GHz and the 3-dB RC roll-off frequency due to electrical parasitics is found to be 10 GHz.
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High-speed modulation of semiconductor lasers
R.S. Tucker · Journal of Lightwave Technology · 1985 · 399 citations
Ultra-high speed semiconductor lasers
Kam Y. Lau, A. Yariv · IEEE Journal of Quantum Electronics · 1985 · 237 citations
Effect of nonlinear gain on the bandwidth of semiconductor lasers
R. Olshansky, D. Fye, John P. Manning et al. · Electronics Letters · 1985 · 38 citations