Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

Group III nitride semiconductors for short wavelength light-emitting devices

John Orton, C. T. Foxon · Reports on Progress in Physics · 1998 · 511 citations

Engineering, Materials Engineering, Materials Science +17

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, R. Averbeck, L. F. Chen et al. · Journal of Applied Physics · 2000 · 485 citations

Engineering, Materials Engineering, Materials Science +17

Adatom diffusion at GaN (0001) and (0001) surfaces

Tosja Zywietz, Jörg Neugebauer, Matthias Scheffler · Applied Physics Letters · 1998 · 452 citations · Full text

Natural Sciences, Materials Science, Physics +17

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa, B. Heying, Xuemei Wu et al. · Journal of Applied Physics · 1997 · 404 citations

Engineering, Materials Engineering, Materials Science +17

Structure of GaN(0001): The laterally contracted Ga bilayer model

John E. Northrup, Jörg Neugebauer, R. M. Feenstra et al. · Physical review. B, Condensed matter · 2000 · 352 citations · Full text

Natural Sciences, Materials Science, Physics +16