Concepedia

Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

B. Lee, Sukanta Bose, M.H. Kim, Andrew Dean Reed, G. E. Stillman, W.I. Wang, L. Viña, P. C. Colter

Journal of Crystal Growth · 1989 · 54 citations · 50 references

DOI

Concepts

References

50

The growth of crystals and the equilibrium structure of their surfaces

W. K. Burton, N. Cabrera, F. C. Frank · Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences · 1951 · 5.3K citations

, , +16

The influence of dislocations on crystal growth

F. C. Frank · Discussions of the Faraday Society · 1949 · 1.1K citations

, , +8

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

, , +12

Growth and perfection of crystals

J. A. Campbell · Journal of Chemical Education · 1959 · 440 citations · Full text

, , +10

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. T. Foxon, B.A. Joyce · Surface Science · 1975 · 396 citations

, , +14