W.I. Wang - Concepedia

Author

W.I. Wang

Columbia University ORCID

Also Known As

W. I. WANG, W. I. Wang, W.I. WANG, W.I. Wang, Wang Wenzhuo, Wang, Weiting, Weiting Wang

Publications

485

Citations

H-Index

Concepts

All Affiliations

Columbia University IBM Research - Thomas J. Watson Research Center United States Naval Research Laboratory

About

W.I. Wang is an author at Columbia University specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	259
2	Applied Physics	12	15	311
3	Physics	8	8	147
4	Electrical Engineering	6	6	153
5	Materials Science	3	3	72

W.I. Wang

Publications

365

Citations

H-Index

Page 1

	Year	Citations
Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs B. Lee, Sukanta Bose, M.H. Kim, Journal of Crystal Growth Ii-vi SemiconductorPhysicsApplied PhysicsGroup IvMolecular Beam Epitaxy	1989	52
Room-temperature InAsSb photovoltaic detectors for mid-infrared applications Hua Shao, W. Li, A. Torfi, IEEE Photonics Technology Letters EngineeringPhotovoltaic DevicesPhotovoltaic SystemPhotovoltaicsSemiconductors	2006	49
High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors X. Li, K. F. Longenbach, Y. Wang, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1992	27
p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb L. F. Luo, K. F. Longenbach, W.I. Wang IEEE Electron Device Letters K. CalculationsElectrical EngineeringElectronic DevicesEngineeringElectronic Engineering	1990	24
A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb K. F. Longenbach, R. Beresford, W.I. Wang IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringSemiconductor Device	1990	21
Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors Q. Wang, P.W. Li, Richard M. Osgood, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1992	19
High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μm Hua Shao, A. Torfi, W. Li, Journal of Crystal Growth PhotonicsPhotoluminescenceEngineeringPhotodetectorsOptical Properties	2008	18
Normal incidence infra-red absorption from intersub-band transitions in <i>p</i> -type GaInAs/AIInAs quantum wells J. Katz, Y. Zhang, W.I. Wang Electronics Letters	1992	17
Optically induced variability of the strain-induced electric fields in (111) GaSb/AlSb quantum wells B. V. Shanabrook, D. Gammon, R. Beresford, Superlattices and Microstructures Categoryquantum ElectronicsPhotonicsEngineeringPhysicsStrain-induced Electric Fields	1990	15
Optical spectroscopy of quantum wells under an external electric field L. Viña, R. T. Collins, E. E. Méndez, Superlattices and Microstructures PhotonicsQuantum ScienceEngineeringPhysicsOptical Properties	1987	14

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