W.I. Wang

Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

B. Lee, Sukanta Bose, M.H. Kim et al. · Journal of Crystal Growth · 1989 · 52 citations

Ii-vi Semiconductor, Physics, Applied Physics +5

Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

Hua Shao, W. Li, A. Torfi et al. · IEEE Photonics Technology Letters · 2006 · 49 citations

Engineering, Photovoltaic Devices, Photovoltaic System +17

High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors

X. Li, K. F. Longenbach, Y. Wang et al. · IEEE Electron Device Letters · 1992 · 27 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +9

p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb

L. F. Luo, K. F. Longenbach, W.I. Wang · IEEE Electron Device Letters · 1990 · 24 citations

K. Calculations, Electrical Engineering, Electronic Devices +8

A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb

K. F. Longenbach, R. Beresford, W.I. Wang · IEEE Transactions on Electron Devices · 1990 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +9