Wet-chemical preparation and spectroscopic characterization of Si interfaces

The Evolution of Silicon Wafer Cleaning Technology

Werner Kern · Journal of The Electrochemical Society · 1990 · 1.6K citations

Chemical Engineering, Wafer Drying, Engineering +15

Ideal hydrogen termination of the Si (111) surface

G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations

Materials Science, Surface Characterization, Engineering +14

Growth of native oxide on a silicon surface

Mizuho Morita, T. Ohmi, Eiji HASEGAWA et al. · Journal of Applied Physics · 1990 · 868 citations

Materials Science, Materials Engineering, Chemical Engineering +11

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Patrick M. Lenahan, P. V. Dressendorfer · Journal of Applied Physics · 1984 · 713 citations

Semiconductors, Semiconductor Technology, Engineering +14

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

Yves J. Chabal, G. S. Higashi, K. Raghavachari et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 662 citations

Engineering, Ultrahigh Vacuum, Chemistry +17