Applied Physics Letters · 1987 · 15 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsIon ImplantationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsDopant ImplantationHall EffectHall Effect MeasurementsIon Implantation EffectsSecondary Ion Mass Spectrometry
We have investigated fundamental electrical characteristics of GaAs implanted with SiFx and SFx (x=1, 2, and 3) molecular ions at energies which give the same dopant atom (Si or S) ion ranges. Three kinds of annealing methods were compared. Characterization of these implanted GaAs layers was carried out by the Hall effect, capacitance-voltage, and secondary ion mass spectrometry measurements.
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