Concepedia

Kaoru Inoue

KI

34

Publications

855

Citations

16

H-Index

1979

Active since

Affiliations

Doshisha University(Current)

Panasonic (Japan)

Tokyo University of Science

The University of Tokyo

Nagoya Institute of Technology

Kaoru Inoue is an author at Doshisha University specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringSemiconductorsOptoelectronicsPower ElectronicsPhysicsMicroelectronicsPower System ControlNanoelectronics

Publications per year

1979–2018

34

Publications

34

Functional tooth restoration by next-generation bio-hybrid implant as a bio-hybrid artificial organ replacement therapy

Masamitsu Oshima, Kaoru Inoue, Kei Nakajima et al. · Scientific Reports · 2014 · 79 citations · Full text

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Naohiro Tsurumi, Hiroaki Ueno, Tomohiro Murata et al. · IEEE Transactions on Electron Devices · 2010 · 73 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structures

Kaoru Inoue, H. Sakaki, Junji Yoshino et al. · Applied Physics Letters · 1985 · 65 citations

Engineering, Substrate Temperatures, Semiconductor Materials +17

A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)

Kaoru Inoue, H. Sakaki · Japanese Journal of Applied Physics · 1984 · 63 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Self-consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double-heterojunction systems under electric fields

Kaoru Inoue, H. Sakaki, Junji Yoshino et al. · Journal of Applied Physics · 1985 · 56 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Electrical Engineering +15

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