1999 · 39 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesChip PackagingDevice CharacterizationDevice ReliabilityHardware DebuggingIntegrated Circuit DesignTiming AnalysisDevice PackagingFlip-chip PackagingOn-wafer Measurement TechniquesSignal AcquisitionSiliconSilicon DebuggingThroughput TimeTrenching
A novel optical probing technique to measure voltage waveforms from flip-chip packaged CMOS integrated circuits (IC) is described. This IR laser based technique allows signal waveform acquisition and high frequency timing measurements directly from active P-N junctions through the silicon backside substrate on ICs mounted in flip-chip stand-alone or multi-chip module packages as well as wire-bond packages on which the chip backside is accessible. The technique significantly improves silicon debug and failure analysis (FA) throughput time (TPT) as compared to backside electron-beam (e-beam) probing because of the elimination of backside trenching and probe hole generation operations.
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Optical Processes in Semiconductors
J. I. Pánkové, D. A. Kiewit · Journal of The Electrochemical Society · 1972 · 4.6K citations
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Electroabsorption Spectrum in Silicon
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