Japanese Journal of Applied Physics · 1980 · 71 citations · 4 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsComposition-depth ProfilesEpitaxial Growth Of Wide-bandgap SemiconductorsSputter DepositionSuperlattice GrowthSuperlattice MaterialsSuperlatticesWide-bandgap Materials GrowthX-ray Diffraction Analysis
InAsSbP-InAs superlattices were grown by organometallic vapor phase epitaxial growth. The superlattice periods were obtained by X-ray diffraction measurements. The compositional depth profiles were observed by Auger electron spectroscopy and simultaneous argon-ion sputter etching. The chemical interface layer width was measured to be less than 60 A for the superlattice with a 335 A period. The results suggest that organometallic vapor phase epitaxy is one of the most useful methods for the growth of high quality superlattices.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations