Japanese Journal of Applied Physics · 1980 · 79 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCrystal GrowthCrystalline MaterialsEpitaxial GrowthSemiconductor Crystal GrowthX-ray CrystallographyX-ray DiffractionEquilibriumLattice DistortionLattice MismatchLattice Mismatch EffectsLattice Mismatch StrainStrain EffectsX-ray Diffraction Analysis
InAs1-xSbx vapor phase epitaxial growth was carried out on InAs substrate using triethylindium, triethylantimony and arsine. The vapor-solid distribution relations for the group V elements were obtained. A simplified formula for the distribution relation, which assumes thermodynamical equilibrium, is presented. The calculated distribution relation was fitted with experimental results. To study the lattice deformations rocking-curve measurements were made using X-ray double-crystal diffraction for (004) and (115) planes. The lattice distortion gradually decreased with increasing lattice mismatch up to 7 %, and cross-hatched surfaces were also observed in this region.