Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO₂(100) substrates

Abstract

High-quality nonpolar m-plane InGaN/GaN multiple quantum wells (MQWs) have been deposited on LiGaO2(100) substrates by the combination of pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) technologies. This work opens up a new prospect for achieving high-efficiency nonpolar m-plane GaN-based devices.