Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

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Small band gap bowing in In1−xGaxN alloys

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Optical band gap of indium nitride

T.L. Tansley, C. P. Foley · Journal of Applied Physics · 1986 · 606 citations

Natural Sciences, Materials Engineering, Materials Science +17

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

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