Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1−x(AlN)x doped with terbium and its optical emission properties

Determination of the thickness and optical constants of amorphous silicon

R. Swanepoel · Journal of Physics E Scientific Instruments · 1983 · 3.9K citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical properties and electronic structure of amorphous Ge and Si

J. Tauc · Materials Research Bulletin · 1968 · 3.5K citations

Natural Sciences, Materials Science, Physics +16

Spectra and Energy Levels of Rare Earth Ions in Crystals

G. H. Dieke, R. A. Satten · American Journal of Physics · 1970 · 1.5K citations

Natural Sciences, Chemistry, Inorganic Chemistry +1

Physics of Amorphous Silicon–Carbon Alloys

J. Bullot, Martin Schmidt · physica status solidi (b) · 1987 · 462 citations

Natural Sciences, Materials Science, Physics +12

Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

P.N. Favennec, H. L’Haridon, M. Salvi et al. · Electronics Letters · 1989 · 439 citations

Engineering, Materials Engineering, Materials Science +17