Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy

Abstract

Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C-H complexes. At the lower C concentrations (<1019 cm−3) the CAs-H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.