D. M. Kozuch

Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy

D. M. Kozuch, Michael Stavola, S. J. Pearton et al. · Applied Physics Letters · 1990 · 77 citations

Carbon-doped Gaas Grown, Epitaxial Growth, Engineering +12

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

D. M. Kozuch, Michael Stavola, S. J. Pearton et al. · Journal of Applied Physics · 1993 · 67 citations

Semiconductors, Semiconductor Technology, Gaas Epitaxial Layers +15

Passivation of shallow impurities in Si by annealing in H2 at high temperature

I. A. Veloarisoa, Michael Stavola, D. M. Kozuch et al. · Applied Physics Letters · 1991 · 47 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +18

Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

W. S. Hobson, S. J. Pearton, D. M. Kozuch et al. · Applied Physics Letters · 1992 · 37 citations

Materials Engineering, Semiconductors, Ii-vi Semiconductor +15

Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair

G. D. Watkins, W. Beall Fowler, Michael Stavola et al. · Physical Review Letters · 1990 · 34 citations

Engineering, Nuclear Physics, Hadron Physic +18